Method for providing increased dopant concentration in selected regions of semiconductor devices
US4814290A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 30, 1987 |
| Grant date | Mar 21, 1989 |
| Priority date | — |
| Expiry date | Oct 30, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76216
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for providing increased dopant concentration in selected regions of semiconductors by providing field implant dopant in the transition region located below the "bird's beak" region and between the field and active regions of a semiconductor. The method comprises the steps of: forming a thin insulating layer on the surface of a semiconductor substrate; depositing a thin anti-oxidant layer on the insulating layer; depositing a layer of photoresist on the anti-oxidant layer; selectively etching the anti-oxidant layer; ion-implanting the field region of the semiconductor substrate; providing spacers on the sides of the anti-oxidant layer; and oxidizing the semiconductor substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.