Thin film transistor utilizing hydrogenated polycrystalline silicon
US4814842A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 25, 1988 |
| Grant date | Mar 21, 1989 |
| Priority date | — |
| Expiry date | May 25, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6745
Abstract
A thin film transistor comprises a substrate, a semiconductor layer comprising a polycrystalline silicon containing 3 atomic % or less of hydrogen provided on said substrate, a source region and a drain region provided in the surface part of said semiconductor layer, an insulating layer provided on said semiconductor layer at the portion between these two regions, a gate electrode provided on said insulating layer, a source electrode forming an electrical contact with the source region and a drain electrode forming an electrical contact with the drain region, the overlapping portions between said gate electrode through the insulating layer beneath said gate electrode and the source region and between said gate electrode through the insulating layer beneath said gate electrode and the drain region begin 2000 .ANG. or less in width.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.