Integral transducer structures employing high conductivity surface features
US4814856A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 7, 1986 |
| Grant date | Mar 21, 1989 |
| Priority date | — |
| Expiry date | May 7, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N39/00
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A semiconductor transducer structure is fabricated by utilizing varying height diffused layers in a sacrificial wafer. A carrier wafer has a dielectric layer on a top surface which includes a layer of glass. The sacarificial wafer, after beign subject to diffusion of highly doped semiconductor material, exhibits a plurality of varying depth regions. These regions manifest the basic transducer structure. By utilizing selective etching, one can thus form a transducer structure on the sacrificial wafer which is bonded to the carrier wafer by means of an electrostatic bond. The resultant method and structure enables one to provide transducers with improved operating characteristics which are adaptable for many different modes of operation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.