Method of making a heteroepitaxial structure by mesotaxy induced by buried implantation
US4816421A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 24, 1986 |
| Grant date | Mar 28, 1989 |
| Priority date | — |
| Expiry date | Nov 24, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a technique, termed "mesotaxy", for producing a heteroepitaxial structure comprising a layer of single crystal second material embedded in, and epitaxial with, a single crystal first material matrix. Mesotaxy comprises implantation of at least one chemical species (e.g., Co, Ni, Cr, Y or Mg) into a single crystal body (typically a semiconductor, e.g., Si or Ge) such that a buried layer rich in the implanted species is formed, and heat treating the implanted body such that a buried stoichiometric compound layer (e.g., CoSi.sub.2) is formed. Exemplarily, 3.multidot.10.sup.17 /cm.sup.2 200 keV Co ions are implanted into (100) Si nominally at 350.degree. C., followed by a heat treatment that consists of 1 hour at 600.degree. C. and 30 minutes at 1000.degree. C. The resulting buried CoSi.sub.2 layer is epitaxial with the Si matrix, has high conductivity and is of good crystalline quality. The Si overlayer is of device quality. The thus produced heteroepitaxial structure can then be used to produce semiconductor devices, e.g., MOSFETs with a buried ground plane.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.