Nonvolatile, semiconductor memory device
US4816883A · kind A · utility
39Cited by
2References
8Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Jun 22, 1987 |
| Grant date | Mar 28, 1989 |
| Priority date | — |
| Expiry date | Jun 22, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B69/00
Abstract
A nonvolatile, EPROM type memory cell, formed using a p-channel MOS device instead of an n-channel MOS device as customary according to the prior art, offers several advantages: improved programming characteristics, a relatively low gate voltage for writing, a lower power dissipation and above all compatability with the great majority of CMOS fabrication processes. An explanation of such surprising characteristics may be attributed to more favorable conditions of electric field during programming, i.e. during charging of the floating gate, in respect to those existing in the case of the conventional n-channel memory cell.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.