Process and apparatus for low pressure chemical vapor deposition of refractory metal
US4817557A · kind A · utility
39Cited by
14References
2Claims
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Key dates
| Filing date | Sep 4, 1987 |
| Grant date | Apr 4, 1989 |
| Priority date | — |
| Expiry date | Sep 4, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28556
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process and apparatus for the low pressure, cold wall, chemical vapor deposition of refractory metals, such as tungsten on a silicon wafer. The silicon wafer is introduced into a loading lock wherein the pressure is reduced to subatmospheric pressure. The silicon wafer is transferred to a deposition chamber where it is heated to an elevated temperature. A refractory metal carbonyl vapor is introduced into the deposition chamber and dissociates to deposit a refractory metal on the silicon wafer. The wafer is transferred to an unloading lock where it is allowed to cool and is then removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.