Long arc lamp for semiconductor heating
US4820906A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Mar 13, 1987 |
| Grant date | Apr 11, 1989 |
| Priority date | — |
| Expiry date | Mar 13, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J61/86
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An long arc gas-discharge lamp for rapidly heating a semiconductor wafer. The spectral output of the lamp is specifically matched to the absorption characteristics of the particular semiconductor wafer being heating by choosing an appropriate gas or mixture of gases. The electrodes of the long arc lamp are separated by a distance greater than the largest dimension of the semiconductor wafer to insure that the entire wafer is illuminated at one time. In addition, the lamp has a high power density to raise the temperature of the semiconductor wafer to the required process temperature. Large diameter metal electrodes are used to conduct more heat from the ends of the lamp. The electrodes contain a low work function metal such as thorium oxide to increase the electron emission. The enclosing glass capillary has thin walls between the electrodes for improved heat dissipation. The glass capillary is cooled to carry the heat away from the lamp.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.