Ion-projection lithographic apparatus with means for aligning the mask image with the substrate
US4823011A · kind A · utility
10Cited by
1References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 15, 1987 |
| Grant date | Apr 18, 1989 |
| Priority date | — |
| Expiry date | May 15, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3045
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An apparatus and method for the fine alignment of a mask with a substrate in ion-projection lithography, e.g. for the production of integrated circuit chips, utilizes a multipole, an axial magnetic field generator and a scale controlling projection lens in the path of the beam. The mask is provided with markings which are imaged on the substrate and brought into registry with corresponding markings thereon utilizing pairs of detectors associated with each linear marking and responsive to secondary emission of the ion-beam marking projected on the substrate. All of the markings are straight lines.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.