High contrast photoresist developer
US4824769A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 28, 1987 |
| Grant date | Apr 25, 1989 |
| Priority date | — |
| Expiry date | Apr 28, 2007 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/322
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A positive photoresist metal ion aqueous developer is provided that gives a high contrast to the photoresist. The developer disclosed comprises a formulation of aqueous alkali-base such as potassium hydroxide and a carboxylated surfactant. The incorporation of the carboxylated surfactant provides the unexpected increase in the contrast of the photoresist. The addition of the carboxylated surfactant increases the gamma from a typical photoresist gamma (.gamma.) of 3 or less to a gamma greater than 5. The high contrast photoresist provides linewidth control and affords improved process latitude in photoresist imaging. The linewidth control is particularly critical in cases where fine lines are to be defined in the resist that covers steps of topography on the coated substrate. The higher the contrast, the less affected the resist by the topography, provided the exposure is adequate to expose the resist. The process latitude afforded by the high contrast is a result of the ability to over develop (develop longer) the exposed resist without affecting the unexposed resist in the adjacent areas.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.