Transistor
US4825265A · kind A · utility
16Cited by
3References
8Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 4, 1987 |
| Grant date | Apr 25, 1989 |
| Priority date | — |
| Expiry date | Sep 4, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/85
Abstract
A transistor is described which the base region comprises a submonolayer of essentially only dopant atoms. One embodiment is a GaAs/AlGaAs heterojunction bipolar transistor in which the base region comprises a submonolayer of Be atoms. The effective base transit time is negligible in these transistors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.