Thin dielectric film measuring system
US4826321A · kind A · utility
47Cited by
4References
10Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 14, 1988 |
| Grant date | May 2, 1989 |
| Priority date | — |
| Expiry date | Mar 14, 2008 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01B11/065
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A system for the precise measurement of thin dielectric films on a substrate by directing a plane polarized laser light beam to the film at the Brewster angle of the substrate and by measuring the intensity changes between a measurement from the substrate alone and from the film coated substrate. Accurate thin film measurements in the range of from about 10 to 1,500 Angstroms are possible.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.