Semiconductor laser device and method of fabricating the same
US4827483A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 11, 1986 |
| Grant date | May 2, 1989 |
| Priority date | — |
| Expiry date | Aug 11, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3432
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser device including at least one of a laser active layer formed of a super lattice and an optical guide layer formed of another super lattice is disclosed in which part of at least one of the super lattices is converted into a mixed crystal by the impurity induced disordering based upon one of impurity diffusion and impurity ion implantation, to divide the super lattice into a first region formed of the mixed crystal and a second region having the super lattice structure, the width of the second region in directions perpendicular to the lengthwise direction of a laser cavity varies along the above lengthwise direction, and the width of a laser excitation region is smaller than the mean value of the width of the second region, to generate laser oscillation having a single transverse mode and a multi longitudinal mode. Thus, the semiconductor laser device emits a laser beam which is small in astigmatism and low in optical feedback noise.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.