Process of fabricating silicon oxide and gettering films on polycrystalline silicon resistance element
US4828629A · kind A · utility
27Cited by
6References
33Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 20, 1986 |
| Grant date | May 9, 1989 |
| Priority date | — |
| Expiry date | Mar 20, 2006 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/904
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Multi-layer film including a silicon oxide film formed by the CVD method and a film having a gettering function is used as a layer insulation film in a semiconductor device having a resistance constituted by polycrystalline silicon, so that an impurity is not introduced into a resistance element formed in the (intrinsic) polycrystalline silicon, which is thereby stabilized, resulting in an improved characteristic of the semiconductor device. A third layer, of Spin on Glass, can be formed on the film having a gettering function so as to improve the flatness of the layer insulation film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.