Method for etching an aluminum film doped with silicon
US4828649A · kind A · utility
174Cited by
21References
15Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 18, 1988 |
| Grant date | May 9, 1989 |
| Priority date | — |
| Expiry date | May 18, 2008 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23F4/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A process for etch of Silicon doped Aluminum films which utilizes the combination of remote and in situ plasma in a low pressure process module and the plasma is generated from a mixture of Helium, BCl.sub.3, and Cl.sub.2, and with the process chamber within the process module being generally at ambient temperatures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.