Lee M. Loewenstein
37Patents
24h-index
32Co-inventors
85Inventor score
Filing activity: Jul 16, 1987 → Jun 29, 2007
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4916091A | Plasma and plasma UV deposition of SiO.sub.2 | Electricity | 469 | Expired |
| US5002632A | Method and apparatus for etching semiconductor materials | Electricity | 433 | Expired |
| US4820377A | Method for cleanup processing chamber and vacuum process module | Emerging Cross-Sectional Technologies | 297 | Expired |
| US4904621A | Remote plasma generation process using a two-stage showerhead | Electricity | 245 | Expired |
| US6110838A | Isotropic polysilicon plus nitride stripping | Electricity | 224 | Expired |
| US4857140A | Method for etching silicon nitride | Electricity | 218 | Expired |
| US4828649A | Method for etching an aluminum film doped with silicon | Chemistry; Metallurgy | 174 | Expired |
| US4886570A | Processing apparatus and method | Chemistry; Metallurgy | 151 | Expired |
| US4867841A | Method for etch of polysilicon film | Electricity | 130 | Expired |
| US4878994A | Method for etching titanium nitride local interconnects | Electricity | 118 | Expired |
| US4836905A | Processing apparatus | Emerging Cross-Sectional Technologies | 100 | Expired |
| US4818326A | Processing apparatus | Electricity | 84 | Expired |
| US5138973A | Wafer processing apparatus having independently controllable energy sources | Chemistry; Metallurgy | 83 | Expired |
| US5248636A | Processing method using both a remotely generated plasma and an in-situ plasma with UV irradiation | Chemistry; Metallurgy | 52 | Expired |
| US5262610A | Low particulate reliability enhanced remote microwave plasma discharge device | Electricity | 48 | Expired |
| US4842686A | Wafer processing apparatus and method | Physics | 47 | Expired |
| US4822450A | Processing apparatus and method | Chemistry; Metallurgy | 45 | Expired |
| US4882008A | Dry development of photoresist | Physics | 42 | Expired |
| US4872938A | Processing apparatus | Electricity | 41 | Expired |
| US4875989A | Wafer processing apparatus | Physics | 32 | Expired |
| US5102231A | Semiconductor wafer temperature measurement system and method | Physics | 32 | Expired |
| US5741396A | Isotropic nitride stripping | Electricity | 31 | Expired |
| US4906328A | Method for wafer treating | Emerging Cross-Sectional Technologies | 30 | Expired |
| US4988644A | Method for etching semiconductor materials using a remote plasma generator | Emerging Cross-Sectional Technologies | 28 | Expired |
| US5437765A | Semiconductor processing | Electricity | 21 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.