Passivating layer for III-V semiconductor materials
US4828935A · kind A · utility
11Cited by
6References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 30, 1988 |
| Grant date | May 9, 1989 |
| Priority date | — |
| Expiry date | Mar 30, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/12681
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A passivating or insulating layer is described for semiconductor substrat The passivating layer is of the formula Zn.sub.1-x-y M.sub.x Q.sub.y Se:D where 0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, M and Q represent different specified elements and D represents a dopant. It is prefered that M and Q are Fe or Mn. The substrate is preferably a III-V semiconductor compound. The devices are capable of rapid switching among other uses.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.