Structure for inhibiting dopant out-diffusion
US4829363A · kind A · utility
34Cited by
14References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 25, 1988 |
| Grant date | May 9, 1989 |
| Priority date | — |
| Expiry date | Jul 25, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/915
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for inhibiting out-diffusion of dopants from polycrystalline or single crystal silicon substrates of high speed semiconductor devices into metal silicide conductive layers disposed on the substrate comprises interposing a refractory metal nitride layer between the doped silicon substrate and the refractory metal silicide conductive layer. Dopant out-diffusion is further retarded, and contact resistance lowered, by adding a thin layer of refractory metal between the refractory metal nitride layer and the silicon substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.