Method of forming III-V semi-insulating films using organo-metallic titanium dopant precursors
US4830982A · kind A · utility
29Cited by
12References
22Claims
0Family size
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Key dates
| Filing date | Jun 4, 1987 |
| Grant date | May 16, 1989 |
| Priority date | — |
| Expiry date | Jun 4, 2007 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/918
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Semi-insulating epitaxial layers of Group III-V based semiconductor compounds are produced by a MOCVD process through the use of organic titanium-based compounds. Resistivities greater than 1.times.10.sup.7 ohm/cm have been achieved.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.