Timothy Weidman
76Patents
22h-index
114Co-inventors
91Inventor score
Filing activity: Jun 4, 1987 → Oct 5, 2023
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6573030B1 | Method for depositing an amorphous carbon layer | Electricity | 1,088 | Expired |
| US8465903B2 | Radiation patternable CVD film | Electricity | 426 | Active |
| US8536068B2 | Atomic layer deposition of photoresist materials and hard mask precursors | Electricity | 346 | Active |
| US7465358B2 | Measurement techniques for controlling aspects of a electroless deposition process | Emerging Cross-Sectional Technologies | 232 | Expired |
| US6583071B1 | Ultrasonic spray coating of liquid precursor for low K dielectric coatings | Electricity | 83 | Expired |
| US6780753B2 | Airgap for semiconductor devices | Electricity | 76 | Expired |
| US6875687B1 | Capping layer for extreme low dielectric constant films | Emerging Cross-Sectional Technologies | 66 | Expired |
| US7951637B2 | Back contact solar cells using printed dielectric barrier | Emerging Cross-Sectional Technologies | 56 | Active |
| US7825044B2 | Curing methods for silicon dioxide multi-layers | Electricity | 53 | Active |
| US7745352B2 | Curing methods for silicon dioxide thin films deposited from alkoxysilane precursor with harp II process | Electricity | 48 | Active |
| US7438949B2 | Ruthenium containing layer deposition method | Electricity | 37 | Expired |
| US6841341B2 | Method of depositing an amorphous carbon layer | Electricity | 35 | Expired |
| US7223526B2 | Method of depositing an amorphous carbon layer | Electricity | 34 | Expired |
| US5439780A | Energy sensitive materials and methods for their use | Physics | 32 | Expired |
| US7256139B2 | Methods and apparatus for e-beam treatment used to fabricate integrated circuit devices | Electricity | 31 | Expired |
| US7226853B2 | Method of forming a dual damascene structure utilizing a three layer hard mask structure | Electricity | 30 | Expired |
| US5885751A | Method and apparatus for depositing deep UV photoresist films | Physics | 29 | Expired |
| US4830982A | Method of forming III-V semi-insulating films using organo-metallic titanium dopant precursors | Emerging Cross-Sectional Technologies | 29 | Expired |
| US7514353B2 | Contact metallization scheme using a barrier layer over a silicide layer | Electricity | 25 | Active |
| US6592980B1 | Mesoporous films having reduced dielectric constants | Emerging Cross-Sectional Technologies | 25 | Expired |
| US6806203B2 | Method of forming a dual damascene structure using an amorphous silicon hard mask | Electricity | 24 | Expired |
| US6936551B2 | Methods and apparatus for E-beam treatment used to fabricate integrated circuit devices | Electricity | 23 | Expired |
| US4921321A | Silicon network polymers | Electricity | 21 | Expired |
| US8183081B2 | Hybrid heterojunction solar cell fabrication using a metal layer mask | Emerging Cross-Sectional Technologies | 21 | Active |
| US9263625B2 | Solar cell emitter region fabrication using ion implantation | Emerging Cross-Sectional Technologies | 20 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.