Resist pattern forming process with dry etching
US4835089A · kind A · utility
14Cited by
12References
34Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 10, 1987 |
| Grant date | May 30, 1989 |
| Priority date | — |
| Expiry date | Jun 10, 2007 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/095
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A thick polymer film containing an aromatic bisazide and/or an aromatic sulfonyl azide compound is formed on a substrate having topography level on its surface to flatten said surface and then heated or the whole surface thereof is exposed to a light. A mask pattern having a dry etching resistance higher than that of the polymer is formed on the polymer film, exposed parts of the polymer film are removed by the dry etching and the exposed parts of the film to be processed are removed to form a pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.