Processing apparatus

US4836905A · kind A · utility

Assignee

• TEXAS INSTRUMENTS INCORPORATED · US

Inventors

• Cecil J. Davis · Greenville, US
• Joseph V. Abernathy · Wylie, US
• Robert T. Matthews · Plano, US
• Randall C. Hildenbrand · Richardson, US
• Bruce Simpson · Toronto, CA
• James G. Bohlman · Forney, US
• Lee M. Loewenstein · Plano, US
• John I. Jones · Plano, US

Key dates

• Filing date: Jul 16, 1987
• Grant date: Jun 6, 1989
• Expiry date: Jul 16, 2007

Classification

• Technology area (CPC Y): Emerging Cross-Sectional Technologies
• CPC primary: Y10S414/137
• WIPO field: Surface technology, coating
• WIPO sector: Chemistry

Abstract

A processing apparatus and method which permits sputter deposition and which is compatible with a vacuum processing system wherein the wafers are largely transferred and processed in the face down position. This includes an additional wafer movement, wherein, after a wafer has been emplaced face down, in a position where it can be clamped against the susceptor, the susceptor is rotated from its approximately horizontal position up to a more nearly vertical position. While the wafer is in the more nearly vertical position, sputter deposition may be performed. In situ or remote plasma capability is usefully provided in the bottom part of the chamber, so that a dry deglaze or cleanup step can be performed while the wafer is in its substantially horizontal position, followed by a sputter deposition after the wafer has been moved to its more nearly vertical position.