Apparatus and process for vacuum chemical epitaxy
US4838201A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 12, 1986 |
| Grant date | Jun 13, 1989 |
| Priority date | — |
| Expiry date | Dec 12, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/83
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A vacuum chemical epitaxy apparatus comprising a first mixing chamber having an inlet for introducing a metal-organic gaseous materials and n-type and p-type dopants, and a plurality of outlets for directing the flow of said metal-organic gases and n-type and p-type dopants toward a substrate; a second mixing chamber disposed below said first chamber having an inlet for introducing a metal-organic gaseous material and n-type and p-type dopants, and a plurality of passages through said first chamber and an outlet for each passage, wherein the passage outlets are in substantially the same plane with the outlets of the first chamber; and means for exhausting the metal-organic gaseous materials and n-type and p-type dopants from the second chamber.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.