Dry etching apparatus
US4838978A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 20, 1987 |
| Grant date | Jun 13, 1989 |
| Priority date | — |
| Expiry date | Nov 20, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/32431
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A dry etching apparatus which includes an anode located at an upper side and a cathode located at a lower side which face each other in a vacuum vessel. A high-frequency power can be applied across the anode and the cathode. A flange section extends from the inner wall of the vacuum vessel, and is located between the anode and the cathode. A semiconductor wafer can be placed on the cathode through a tray. The cathode is moved toward the anode together with the tray and the wafer. When the edge portion of the tray abuts against the flange section, the interior of the vacuum vessel is partitioned into an etching chamber and the other chamber. A magnetic field is applied to the etching chamber from outside the vacuum vessel, and an etching gas is also introduced into the etching chamber. When the etching gas is introduced, the interior of the etching chamber is evacuated to be maintained at a predetermined pressure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.