Fabrication of high-speed dielectrically isolated devices utilizing buried silicide outdiffusion
US4839309A · kind A · utility
Assignees
Inventors
Key dates
| Filing date | Mar 30, 1988 |
| Grant date | Jun 13, 1989 |
| Priority date | — |
| Expiry date | Mar 30, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/147
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of fabricating a dielectrically-isolated structure is disclosed rein the structure includes a layer of silicide which is selectively doped, preferably using an ion implantation process. The doped silicide is then used as the diffusion source for the subsequent formation (through a heat treatment) of various active portions (collector, emitter, drain, source, for example) of a variety of high-voltage, high-speed active devices. The non-doped silicide is advantageously utilized as a low-resistance contact between the buried diffusion region and the surface electrode. In an alternative embodiment, bottom portions of the silicide contiguous to the tub are removed, leaving only vertical silicide portions adjacent to the sidewalls of the dielectrically isolated tub.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.