Measuring apparatus for etching pits
US4840487A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 19, 1986 |
| Grant date | Jun 20, 1989 |
| Priority date | — |
| Expiry date | Jun 19, 2006 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01B11/22
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An apparatus for measuring dry etching pits formed in a semiconductor device during the manufacture thereof by employing optical means. Wiring on semiconductor devices increasingly become fine or minute, i.e., the size of wiring of some devices is less than 1 .mu.m. A technical matter to be solved is to effect highly accurate dimensional measurement in such submicron region. The apparatus has a .theta. stage which is additionally provided on an XY stage, and a mechanism which provides excellent selectivity in detection of interference intensity of diffracted beam. In addition, a short wavelength laser, such as a He-Ne, He-Cd, N.sub.2 or Ar laser, is employed as a laser source. As a practical advantage, it is possible to monitor etching of a pit with a depth on the order of 10 .mu.m with respect to a pattern with a planar dimension of 0.3 .mu.m to 1.0 .mu.m.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.