Semiconductor laser device
US4841531A · kind A · utility
7Cited by
2References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 11, 1988 |
| Grant date | Jun 20, 1989 |
| Priority date | — |
| Expiry date | Feb 11, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/3434
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A semiconductor laser having a double hetero structure comprises a cladding layer of In.sub.1-x-y Ga.sub.x Al.sub.y P.sub.1-z As.sub.z (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, 0.ltoreq.z.ltoreq.0.5, 0.5.ltoreq.x+y.ltoreq.1) and an active layer of a strained-layer-superlattice of In.sub.1-x-y Ga.sub.x Al.sub.y P.sub.1-z As.sub.z (0.ltoreq.x.ltoreq.1, 0.ltoreq.y.ltoreq.1, 0.ltoreq.z.ltoreq.1, 0.ltoreq.x+y.ltoreq.1) system, thus enabling the lasing of wavelength ranges from infra-red to green.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.