Wafer processing apparatus and method
US4842686A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jul 17, 1987 |
| Grant date | Jun 27, 1989 |
| Priority date | — |
| Expiry date | Jul 17, 2007 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70866
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A plasma reactor with in situ ultraviolet generation processing aparatus and method. Ultraviolet light to illuminate the face of a wafer being processed is generated by a plasma which is within the vacuum processing chamber but is remote from the face of the wafer. It is useful to design the gas flow system so that the ultraviolet-generating plasma has its own gas feed, and the reaction products from the ultraviolet-generating plasma do not substantially flow or diffuse to the wafer face. A transparent isolator between the ultraviolet plasma space and the processing space near the wafer face is useful so that the ultraviolet plasma can be operated at a vacuum level slightly different from that used near the wafer face, but this transparent window is not made thick enough to act as a full vacuum seal. Optionally, this window may be omitted entirely.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.