Electron beam contactless testing system with grid bias switching
US4843330A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 30, 1986 |
| Grant date | Jun 27, 1989 |
| Priority date | — |
| Expiry date | Oct 30, 2006 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/306
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An electron beam system and method for testing three dimensional networks of conductors embedded in an insulating material specimen without physical contact to detect open and short circuit conditions. Top to top surface wiring is tested by irradiating the specimen with an electron beam at a first beam potential to charge the specimen while negatively biasing a grid placed above the specimen surface, and then irradiating selected portions of the specimen with an electron beam at a second beam potential to read the charge on selected conductors while applying a zero or a positive bias to the grid. In one embodiment the charge beam is a focused scanning beam and the first beam potential is preferably greater than the second beam potential.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.