Method of and apparatus for etching
US4844767A · kind A · utility
16Cited by
5References
13Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Feb 16, 1988 |
| Grant date | Jul 4, 1989 |
| Priority date | — |
| Expiry date | Feb 16, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/3346
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A plasma which is formed by the contact between a microwave and a reaction gas is brought into contact with an article to be etched which is AC-biased, thereby effecting etching of an exposed region of the article. The etching is carried out in a state wherein the self-bias formed between the plasma and the article is minimized, whereby it is possible to effect etching which provides high selectivity and which enables a substantially vertical side wall to be formed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.