Method of making mo/tiw or w/tiw ohmic contacts to silicon
US4845050A · kind A · utility
38Cited by
8References
11Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 16, 1987 |
| Grant date | Jul 4, 1989 |
| Priority date | — |
| Expiry date | Nov 16, 2007 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/003
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A conductive member consisting of a first conductor of an alloy of titanium and tungsten and a second conductor of a refractory metal such as molybdenum is sintered to a conductive member of silicon to a temperature in the range of 600.degree. C. to 650.degree. C. in a reducing atmosphere to form a low resistance contact.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.