Semiconductor dopant vaporizer
US4845366A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Oct 23, 1987 |
| Grant date | Jul 4, 1989 |
| Priority date | — |
| Expiry date | Oct 23, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/08
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
The present invention involves apparatus and methods for introducing ion source material into an ion implant system for use in connection with Freeman type sources. A vaporizer unit which is removable from the system is prepared for insertion into the ion implant equipment outside the system. It is cleaned, a new vial of ion source material is introduced and it may be pre-heated to degas it or to prepare it for use in the system. The vaporizer unit which is currently in use is removed, to be cleaned and recharged, and the previously prepared vaporizer unit is inserted, sealed in place and the vacuum established. The ion implant system is, then, ready to resume operation with minimal down time. The vaporizer unit comprises a vaporizer block of high heat conductive material such as copper which includes three cavities or wells. One cavity contains a heater, one a gas flow path for heating and/or cooling, and one contains a sealed vial of semiconductor dopant. Wells for temperature sensors are also provided, as are means for breaking or puncturing the vial once the ion implant system is ready for operation. The evaporator block is mounted, when in use, in the vacuum chamber of the ion…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.