Thin film electrical devices with amorphous carbon electrodes and method of making same
US4845533A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 26, 1986 |
| Grant date | Jul 4, 1989 |
| Priority date | — |
| Expiry date | Nov 26, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
Abstract
Thin film electrical structures, such as threshold switching devices and phase change memory cells, preferably utilizing electrically stable, relatively inert, conductive electrodes including a non-single-crystal deposited film of carbon material, are disclosed. The film of carbon material, which preferably is amorphous and substantially pure, is disposed adjacent to a layer of active material such as an amorphous semiconductor, and serves to prevent undesired degradation of the active material, especially when the device is carrying appreciable current in its on-state. A method of making such structures with high quality interfaces between the semiconductor layer and the conductive carbon barrier layers adjacent thereto by successively depositing such layers in a continuously maintained partial vacuum is disclosed. The method may include a step performed in the vacuum for hermetically sealing all of, or at least the electrically switchable portion of, the active layer against subsequent contamination. Thin film structures suitable for threshold switching or memory applications and employing insulating pores having substantially sloped side walls are also disclosed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.