Semiconductor device and method of manufacturing the same
US4845543A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 29, 1987 |
| Grant date | Jul 4, 1989 |
| Priority date | — |
| Expiry date | Jun 29, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/20753
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device in which a pellet and external leads are connected by bonding wires made of aluminum containing a predetermined amount of at least one additive element, the bonding wires containing 0.05 to 3.0 weight % of at least one element selected from the group consisting of iron and palladium, or containing 0.05-3.0 weight % of at least one first element selected from the group consisting of nickel, iron and palladium and 0.05-3.0 weight % of at least one second element selected from the group consisting of magnesium, manganese and silicon, whereby the corrosion resistance of the wire is increased and the breaking strength of the wire is enhanced. The bonding wires can be connected to the semiconductor pellet by a ball bond, and it is disclosed that using a ball having a Vickers hardness of 30-50 enables good bonding of the bonding wire to, e.g., an aluminum pad on the semiconductor pellet to be achieved. A ball having such hardness can be provided by using specific aluminum alloy compositions and by a quenching of the ball. The bonding wire has the shape and height of its loop controlled by annealing the bonding wire at a specified temperature before bonding or by emp…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.