Apparatus and methods for ion implantation
US4847504A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Feb 24, 1986 |
| Grant date | Jul 11, 1989 |
| Priority date | — |
| Expiry date | Feb 24, 2006 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J49/30
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A system for implanting ions into a target element including a source arrangement for producing an ion beam; a beam analyzing arrangement for receiving the ion beam and selectively separating various ion species in the beam on the basis of mass to produce an analyzed beam; and a beam resolving arrangement disposed in the path of the analyzed beam for permitting a preselected ion species to pass to the target element. The analyzing arrangement has an ion dispersion plane associated therewith. The source arrangement has an associated ion emitting envelope including an area of substantial extension in a plane parallel to the ion dispersion plane and producing ions entering said analyzing arrangement which are travelling substantially either toward or from a common apparent line object lying in a plane perpendicular to the ion dispersion plane.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.