Monolithically integrated insulated gate semiconductor device
US4847671A · kind A · utility
19Cited by
6References
10Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 19, 1987 |
| Grant date | Jul 11, 1989 |
| Priority date | — |
| Expiry date | May 19, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/148
Abstract
A monolithically integrated semiconductor device preferably comprising a thyristor driven transistor is disclosed. The thyristor provides a base drive sufficient to fully turn-on an inherent bipolar transistor and achieve the maximum benefit of bipolar conduction within the semiconductor device. The thyristor can be turned on and off through insulated gate control by decoupling the emitter region of the thyristor from the cathode electrode of the device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.