Deva Pattanayak
58Patents
15h-index
35Co-inventors
84Inventor score
Filing activity: Nov 29, 1985 → Feb 6, 2018
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US7183610B2 | Super trench MOSFET including buried source electrode and method of fabricating the same | Electricity | 74 | Expired |
| US4963951A | Lateral insulated gate bipolar transistors with improved latch-up immunity | Electricity | 67 | Expired |
| US6906380B1 | Drain side gate trench metal-oxide-semiconductor field effect transistor | Electricity | 43 | Expired |
| US5655276A | Method of manufacturing two-dimensional array ultrasonic transducers | Emerging Cross-Sectional Technologies | 42 | Expired |
| US4912541A | Monolithically integrated bidirectional lateral semiconductor device with insulated gate control in both directions and method of fabrication | Electricity | 27 | Expired |
| US4857983A | Monolithically integrated semiconductor device having bidirectional conducting capability and method of fabrication | Electricity | 27 | Expired |
| US4888627A | Monolithically integrated lateral insulated gate semiconductor device | Electricity | 23 | Expired |
| US5748564A | Amplified acousto-optical vibration sensor and ultrasonic transducer array | Physics | 23 | Expired |
| US7544545B2 | Trench polysilicon diode | Electricity | 20 | Active |
| US7344945B1 | Method of manufacturing a drain side gate trench metal-oxide-semiconductor field effect transistor | Electricity | 19 | Expired |
| US4847671A | Monolithically integrated insulated gate semiconductor device | Electricity | 19 | Expired |
| US7557409B2 | Super trench MOSFET including buried source electrode | Electricity | 18 | Active |
| US7279743B2 | Closed cell trench metal-oxide-semiconductor field effect transistor | Electricity | 18 | Expired |
| US7833863B1 | Method of manufacturing a closed cell trench MOSFET | Electricity | 16 | Active |
| US7012005B2 | Self-aligned differential oxidation in trenches by ion implantation | Electricity | 16 | Expired |
| US7361558B2 | Method of manufacturing a closed cell trench MOSFET | Electricity | 15 | Expired |
| US9431249B2 | Edge termination for super junction MOSFET devices | Electricity | 13 | Active |
| US6913977B2 | Triple-diffused trench MOSFET and method of fabricating the same | Electricity | 13 | Expired |
| US6903412B2 | Trench MIS device with graduated gate oxide layer | Electricity | 11 | Expired |
| US9443974B2 | Super junction trench power MOSFET device fabrication | Electricity | 10 | Active |
| US8368126B2 | Trench metal oxide semiconductor with recessed trench material and remote contacts | Electricity | 10 | Active |
| US9437424B2 | High mobility power metal-oxide semiconductor field-effect transistors | Electricity | 10 | Active |
| US6709930B2 | Thicker oxide formation at the trench bottom by selective oxide deposition | Electricity | 10 | Expired |
| US9425306B2 | Super junction trench power MOSFET devices | Electricity | 9 | Active |
| US9431550B2 | Trench polysilicon diode | Electricity | 8 | Active |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.