Method for etching tungsten
US4849067A · kind A · utility
28Cited by
20References
2Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jul 16, 1987 |
| Grant date | Jul 18, 1989 |
| Priority date | — |
| Expiry date | Jul 16, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32136
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A fluorine based metal etch chemistry, wherein an admixture of etch products (or species which are closely related to etch products) is added during the post etch stage, i.e. during the stage when the pattern has partially cleared by overetch is not yet completed, to maintain the balance of chemistries which provides selectivity and anisotropy. In a tungsten etch, WF.sub.6 is usefully added during the post etch period to provide this loading.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.