Process for preparing low electrical contact resistance composition
US4849079A · kind A · utility
10Cited by
3References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Apr 26, 1988 |
| Grant date | Jul 18, 1989 |
| Priority date | — |
| Expiry date | Apr 26, 2008 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C14/3414
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A composition of a metallic compound represented by the formula MT, and G is provided by sputtering an M.sub.x G.sub.100-x target. M is a metal selected from the group of titanium, hafnium, zirconium, and mixtures thereof. T is selected from the group of N, C, and mixtures thereof. G is a metal selected from the group of gold, platinum, and palladium. X is an integer from about 65 to about 95. Also provided are substances coated with the composition and process for depositing the composition on substrates.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.