Method for selectively depositing metal on a substrate
US4849260A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 30, 1987 |
| Grant date | Jul 18, 1989 |
| Priority date | — |
| Expiry date | Jun 30, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/01019
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A wafer, in which at least one via hole is made in an insulating film formed on the substrate, is held on a wafer holder in a reaction chamber under reduced pressure, WF.sub.6 gas is introduced into the reaction chamber so that a first metallic film of W is formed on the substrate in the via hole. The additional WF.sub.6 gas and H.sub.2 gas are introduced into the chamber and light from a heating lamp is directed onto the wafer such that a difference in temperature is created between the insulating film and the first metallic film such that a second metallic film of W is formed only on the first metallic film. The temperature difference is created because of the differences of the absorption ratios of infrared components of the light between the insulating film, the substrate and the first metallic film. The WF.sub.6 gas and H.sub.2 gas are made to flow in flat form substantially parallel to the surface of the wafer and an inert gas, such as Ar, is made to flow toward the surface of the wafer to control the flow of WF.sub.6 and H.sub.2.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.