Semiconductor devices
US4849364A · kind A · utility
3Cited by
15References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 16, 1987 |
| Grant date | Jul 18, 1989 |
| Priority date | — |
| Expiry date | Dec 16, 2007 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/01
Abstract
A method of manufacturing a bipolar transistor (1) with semi-self-aligned p.sup.+ base contacts (27,27a). A p-type base region (28) is formed in a surface region of an n-type region 5 comprising a collector. An element (29) of, for example, n.sup.+ doped polycrystalline silicon, and comprising an emitter, is formed on the surface in contact with the base region (28). The base contacts (27,27a) are formed by implantation and using the element (29) as a mask. An n.sup.+ collector contact (25) is made to the n-tpe region (5).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.