Growth of semi-insulating indium phosphide by liquid phase epitaxy
US4849373A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 2, 1988 |
| Grant date | Jul 18, 1989 |
| Priority date | — |
| Expiry date | Jun 2, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S148/101
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In a method for Liquid Phase Epitaxy (LPE) of semi-insulating InP, a solution of P, Ti and a p-type dopant in molten In is cooled in a non-oxidizing ambient at a surface of a substrate to grow an epitaxial layer of doped InP on the surface. The concentration of p-type dopant in the solution is such as to provide a concentration of p-type dopant in the grown epitaxial layer greater than the aggregate concentration of any residual contaminants in the grown epitaxial layer, and the concentration of Ti in the solution is such as to provide a concentration of Ti in the grown epitaxial layer greater than the concentration of p-type dopant in the grown epitaxial layer. The required melt concentrations are determined empirically. The method can be performed at temperature below 650 degrees Celsius and is particularly suited to the LPE growth of semi-insulating InP to isolate InP-InGaAsP buried heterostructure lasers.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.