D. Gordon Knight
4Patents
2h-index
5Co-inventors
37Inventor score
Filing activity: Jun 2, 1988 → Nov 29, 2004
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4849373A | Growth of semi-insulating indium phosphide by liquid phase epitaxy | Emerging Cross-Sectional Technologies | 6 | Expired |
| US5869398A | Etching of indium phosphide materials for microelectronics fabrication | Electricity | 2 | Expired |
| US6829275B2 | Hybrid confinement layers of buried heterostructure semiconductor laser | Electricity | 0 | Expired |
| US7368725B2 | Optical radiation sensor system having a radiation window with a non-circular opening | Physics | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.