Thermally stable low resistance contact
US4849802A · kind A · utility
9Cited by
2References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 16, 1988 |
| Grant date | Jul 18, 1989 |
| Priority date | — |
| Expiry date | Aug 16, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/62
Abstract
In a semiconductor device, a contact with low resistance to a III-V compound semiconductor substrate was fabricated using refractory materials and small amounts of indium as the contact material. The contact material was formed by depositing Mo, Ge and W with small amounts of In onto doped GaAs wafers. The contact resistance less than 1.0 ohm millimeter was obtained after annealing at 800.degree. C. and the resistance did not increase after subsequent prolonged annealing at 400.degree. C.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.