Semiconductor device and method of manufacturing the same
US4849854A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Nov 12, 1987 |
| Grant date | Jul 18, 1989 |
| Priority date | — |
| Expiry date | Nov 12, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D1/68
Abstract
Two or three trenches are formed in a silicon substrate, and a conductive layer is formed in the silicon substrate facing the trenches. An oxide film for insulation is formed on a surface of the conductive layer facing the trenches. The trenches are filled with polysilicon, and the conductive layer and the polysilicon constitute a capacitor through the oxide film. Since this capacitor has two or three trenches, an effective area sufficiently large for increasing a capacitance value of the capacitor can be obtained without increasing the plane area of the device. The conductive layer and the polysilicon are connected to aluminum interconnection layers through a silicide layer, so as to be connected to other integrated circuits.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.