Metallization for integrated devices

US4851895A · kind A · utility

Assignee

• American Telephone and Telegraph Company, AT&T Bell Laboratories · US

Inventors

• Martin L. Green · Summit, US
• Michal E. Gross · Somerville, US

Key dates

• Filing date: Jun 3, 1987
• Grant date: Jul 25, 1989
• Expiry date: Jun 3, 2007

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L2924/0002
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Metallization of integrated devices using ruthenium as a metallization material results in well-adhering contacts to source and drain regions as well as to gate oxide. Ruthenium is similarly suited as a diffusion barrier metallization between, e.g., silicon and aluminum and as an interconnection metallization material. And, as a diffusion barrier material, ruthenium dioxide may be used.