Sputtering process and an apparatus for carrying out the same
US4853102A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 24, 1987 |
| Grant date | Aug 1, 1989 |
| Priority date | — |
| Expiry date | Dec 24, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3402
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A sputtering process and an apparatus for carrying out the same for forming a film of a film forming material over the surface of a substrate. A target formed of the film forming material is held on a sputtering electrode receiving a voltage, and the substrate is disposed at a predetermined distance and opposite to the target. A high-density plasma is produced by producing a cusp field between the target and the substrate and a bias voltage is applied to the surface of the substrate to make ions of the high-density plasma fall on the surface of the substrate in order to make the particles of the film forming material sputtered from the target deposit in a thin film over the surface of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.