Semiconductor and process of fabrication thereof
US4855798A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 13, 1988 |
| Grant date | Aug 8, 1989 |
| Priority date | — |
| Expiry date | Dec 13, 2008 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S257/915
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device having a salicide (self-aligned silicide) configuration and operable as, for example, a dynamic RAM device is fabricated by preparing a semiconductor substrate, forming a layer of silicon in, on or over the semiconductor substrate, forming a layer of a metal on the layer of silicon, the metal silicide layer having a surface portion, and heating the resultant structure in the presence of a reaction ambient containing nitride for forming on the layer of silicon a layer of a metal silicide having a surface portion and nitriding the surface portion to form a nitride layer consisting of a nitride of said metal silicide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.