Semiconductor laser having an active layer and cladding layer
US4856013A · kind A · utility
21Cited by
6References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 28, 1987 |
| Grant date | Aug 8, 1989 |
| Priority date | — |
| Expiry date | Oct 28, 2007 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01S5/32308
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A laser has an active layer formed on a prepared substrate, a cladding layer on the active layer and a contact layer on the cladding layer. The active layer and contact layer are formed of a semiconductor material of elements from Groups III-V. The contact layer and cladding layer are formed into an elongated projecting rib wherein the cladding layer has a remaining planar portion disposed across the active layer. An insulating layer of semiconductor of elements from Group II-VI is formed on each side of the rib supported on the remaining cladding layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.