Hideaki Iwano
20Patents
12h-index
16Co-inventors
74Inventor score
Filing activity: Mar 28, 1984 → Jul 17, 1995
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US5182757A | Surface emission type semiconductor laser | Electricity | 27 | Expired |
| US5181219A | Surface emission type semiconductor laser | Electricity | 27 | Expired |
| US5181221A | Surface emission type semiconductor laser | Electricity | 26 | Expired |
| US4856013A | Semiconductor laser having an active layer and cladding layer | Electricity | 21 | Expired |
| US5317584A | Surface emission type semiconductor laser | Electricity | 19 | Expired |
| US5295148A | Surface emission type semiconductor laser | Electricity | 19 | Expired |
| US5404369A | Surface emission type semiconductor laser | Electricity | 16 | Expired |
| US5179566A | Light-generating device and method of fabricating same | Electricity | 15 | Expired |
| US5621750A | Surface emission type semiconductor laser, method and apparatus for producing the same | Electricity | 14 | Expired |
| US5625637A | Surface emitting semiconductor laser and its manufacturing process | Electricity | 13 | Expired |
| US5587335A | Method of making surface emission type semiconductor laser | Electricity | 13 | Expired |
| US5623509A | Semiconductor laser and light-sensing device using the same | Electricity | 12 | Expired |
| US4666808A | Amorphous silicon electrophotographic sensitive member | Physics | 11 | Expired |
| US5436876A | Optical head and optical memory device | Physics | 11 | Expired |
| US5537666A | Surface emission type semiconductor laser | Electricity | 10 | Expired |
| US5436922A | Surface emission type semiconductor laser | Electricity | 9 | Expired |
| US5375133A | Surface emitting semiconductor laser and method of manufacture | Electricity | 8 | Expired |
| US5194119A | Method of anisotropic dry etching of thin film semiconductors | Electricity | 8 | Expired |
| US5356832A | Method of making surface emission type semiconductor laser | Emerging Cross-Sectional Technologies | 7 | Expired |
| US4675264A | Electrophotographic sensitive member with amorphous Si barrier layer | Physics | 5 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.