Method for etching silicon nitride
US4857140A · kind A · utility
218Cited by
4References
55Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 31, 1988 |
| Grant date | Aug 15, 1989 |
| Priority date | — |
| Expiry date | Mar 31, 2008 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31116
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for etching silicon nitride which utilizes free radicals from a remote plasma generated using a fluorine containing gas; and hydrogen; to produce an etch which is selective to selected materials, for example, silicon and silicon dioxide.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.